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Ebook British Versus Polish Relationship Talk

... (Stanley and Wise 1993). Drawing upon a statement by Sartre which points out that “no individual or case is ever just an ...

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Ebook Debt Maturity in a Small Open Economy under Inflation Target

This paper is motivated by the short term lending bias observed in many emerging market countries, especially in Latin America. We show that when an economy is prone to confidence crises, households rationally demand a premium to compensate for this risk. This raises the cost to a Treasury of borrowing long, and leads to the observed short term debt maturity structure. In order to understand this problem, we study the impact of alternative government debt maturity strategies in a small, open dynamic general equilibrium model. We subject the economy to an exogenous risk premium shock.

The exchange rate depreciates immediately and the Central Bank must increase the interest rate to control inflation. Surprise inflation reduces consumer wealth because it depresses the real return on nominal bonds. This wealth effect is worse when the household holds longer maturity bonds because the foregone return is greater. We show that when an economy is prone to confidence crises, investors will hold longer bonds only if they are compensated for this possible wealth loss. This extra compensation increases the fiscal authority’s borrowing cost, and it in turn reacts by shortening the maturity structure.

Ebook Experiments and analytical investigations of granular materials: shear flow and convective heat transfer

Granular materials flowing down an inclined chute were studied experimentally and analytically. Characteristics of convective heat transfer to granular flows were also investigated experimentally and numerically.

Experiments on continuous, steady flows of granular materials in an inclined chute were conducted with the objectives of understanding the characteristics of chute flows and of acquiring information on the rheological behavior of granular material flow. Two neighboring fibre optic displacement probes were employed to measure mean velocity, one component of velocity fluctuations, and linear concentration at the wall and free surface boundaries. A shear gauge was also developed to make direct measurement of shear stress at the chute base. Measurements of solid fraction, velocity, shear rate, and velocity fluctuations were analyzed to understand the chute flow characteristics, and the rheological behavior of granular materials was studied with the present experimental data. The vertical profiles of mean velocity, velocity fluctuation, and solid fraction were also obtained at the sidewalls.

Ebook Diamond semiconductor technology for RF device applications

Diamond, known for more than 200 years, has been a dream for the device engineers due to its unique material properties. It was identified as carbon in 1796, but synthesized in 1954. The main reason behind this is the difficulties to exploit these properties due to the cost and scarcity of large natural diamonds, and the fact that diamond was only available in the form of stones or grit. To overcome these problems, researchers realized that in order to form diamond, conditions are needed where diamond is in a more stable phase. The chemical vapor deposition (CVD) of diamond is one of the most popular, technically well understood and established, as well as commercially viable methods for synthesizing diamond. The first reproducable synthesis of artificial diamond, using a process requiring high temperature and high pressure was reported by General Electric Company in 1955. CVD was then used for the first time for synthesizing diamond by Eversole in 1962.

CVD is a process in which gaseous precursors are introduced into a reactor and a solid is deposited on a usually hot substrate due to chemical reactions between the precursors. CVD is an atomistic process, in that the coat grows molecule by molecule. The consequence is that the process is slow and coatings are thin, but the result is a dense high quality deposit with good adhesion to the substrate due to atomic bond formation. Conventionally, the substrate is thermally activated to initiate the CVD reaction, typically above 800 °C. This could also be a serious limitation to some less stable sub-strates. Alternative activation techniques have recently become available which can effectively lower the reaction threshold temperature to $100 °C. These are laser-assisted CVD (LCVD), plasma-activated CVD (PACVD) and electron beam induced CVD (EBCVD). All CVD techniques for producing diamond films require a means of activating gas-phase carbon-containing precursor molecules. This generally involves thermal (e.g. hot filament) or plasma (DC or RF) activation, or use of a combustion flame (oxyacetylene or plasma torches). While each method differs in detail, they all share features in common. A detailed study on CVD diamond process and films is already done by Railkar
et al.

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